Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Room Temperature Operation Of Quantum Cascade Lasers Monolithically Integrated Onto A Lattice-Mismatched Substrate

Go, R.
Krysiak, H.
Fetters, M.
Figueiredo, P.
Suttinger, M.

January 2018

Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...

New frontiers in quantum cascade lasers and applications

Capasso, F
Gmachl, C
Paiella, R
Tredicucci, A
Hutchinson, AL
Sivco, DL
Baillargeon, JN
Cho, AY
Liu, HC

January 2000

Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...

Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser

Li CM
Liu FQ
Zhang ZY
Meng XQ
Jin P
Wang ZG
Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2003

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...

Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Green, R.P.
Wilson, L.R.
Revin, D.G.
Zibik, E.A.
Cockburn, J.W.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pflügl, C.
Schrenk, W.
Strasser, G.
Tey, C.M.
Krysa, A.B.
Roberts, J.S.
Cullis, A.G.

January 2005

We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...

MOVPE grown quantum cascade lasers : single mode performance and structural quality

Green, R.P.
Wilson, L.R.
Revin, D.G.
Zibik, E.A.
Cockburn, J.W.
Krysa, A.B.
Tey, C.M.
Roberts, J.S.
Pflügl, C.
Cullis, A.G.
Schrenk, W.
Strasser, G.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2005

We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

Revin, D.G.
Wilson, L.R.
Zibik, E.A.
Green, R.P.
Cockburn, J.W.
Steer, M.J.
Airey, R.J.
Hopkinson, M.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2009

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...

Metalorganic vapour phase epitaxy of InGaAs/InAlAs and GaAs/AlGaAs quantum cascade laser structures

Krysa, A.
Revin, D.G.
Atkins, C.
Kennedy, K.
Cockburn, J.W.

September 2012

Metalorganic vapour phase epitaxy (MOVPE) has been successfully introduced by our group as an altern...

High power and tunable single-mode quantum cascade lasers

Gmachl C
Capasso F
Tredicucci A
Sivco DL
Baillargeon JN
Hutchinson AL
Cho AY

January 2000

Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

Revin, D.G.
Wilson, L.R.
Zibik, E.A.
Green, R.P.
Cockburn, J.W.
Steer, M.J.
Airey, R.J.
Hopkinson, M.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2005

We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

Liu FQ
Zhang QS
Zhang YZ
Ding D
Xu B
Wang ZG
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2001

The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...

Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser

Guo, Y
Liu, FQ
Liu, JQ
Li, CM
Wang, ZG
Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn

January 2005

The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam ep...

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

Liu FQ
Zhang YZ
Zhang QS
Ding D
Xu B
Wang ZG
Jiang DS
Sun BQ
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2000

We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...

Strain-compensated quantum cascade lasers operating at room temperature

Liu FQ
Ding D
Xu B
Zhang YZ
Zhang QS
Wang ZG
Jiang DS
Sun BQ
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2000

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

Badura, M.
Bielak, K.
Ściana, B.
Radziewicz, D.
Pucicki, D.
Dawidowski, W.
Żelazna, K.
Kudrawiec, R.
Tłaczała, M.

January 2016

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of t...

Solid source MBE growth of quantum cascade lasers

Liu FQ (Liu Feng-Qi)
Li L (Li Lu)
Wang LJ (Wang Lijun)
Liu JQ (Liu Junqi)
Zhang W (Zhang Wei)
Zhang QD (Zhang Quande)
Liu WF (Liu Wanfeng)
Lu QY (Lu Quanyong)
Wang ZG (Wang Zhanguo)
Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn

January 2009

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...

Room Temperature Operation Of Quantum Cascade Lasers Monolithically Integrated Onto A Lattice-Mismatched Substrate

Go, R.
Krysiak, H.
Fetters, M.
Figueiredo, P.
Suttinger, M.

January 2018

Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...

New frontiers in quantum cascade lasers and applications

Capasso, F
Gmachl, C
Paiella, R
Tredicucci, A
Hutchinson, AL
Sivco, DL
Baillargeon, JN
Cho, AY
Liu, HC

January 2000

Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...

Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser

Li CM
Liu FQ
Zhang ZY
Meng XQ
Jin P
Wang ZG
Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2003

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...

Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Green, R.P.
Wilson, L.R.
Revin, D.G.
Zibik, E.A.
Cockburn, J.W.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.
Pflügl, C.
Schrenk, W.
Strasser, G.
Tey, C.M.
Krysa, A.B.
Roberts, J.S.
Cullis, A.G.

January 2005

We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...

MOVPE grown quantum cascade lasers : single mode performance and structural quality

Green, R.P.
Wilson, L.R.
Revin, D.G.
Zibik, E.A.
Cockburn, J.W.
Krysa, A.B.
Tey, C.M.
Roberts, J.S.
Pflügl, C.
Cullis, A.G.
Schrenk, W.
Strasser, G.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2005

We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

Revin, D.G.
Wilson, L.R.
Zibik, E.A.
Green, R.P.
Cockburn, J.W.
Steer, M.J.
Airey, R.J.
Hopkinson, M.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2009

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...

Metalorganic vapour phase epitaxy of InGaAs/InAlAs and GaAs/AlGaAs quantum cascade laser structures

Krysa, A.
Revin, D.G.
Atkins, C.
Kennedy, K.
Cockburn, J.W.

September 2012

Metalorganic vapour phase epitaxy (MOVPE) has been successfully introduced by our group as an altern...

High power and tunable single-mode quantum cascade lasers

Gmachl C
Capasso F
Tredicucci A
Sivco DL
Baillargeon JN
Hutchinson AL
Cho AY

January 2000

Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

Revin, D.G.
Wilson, L.R.
Zibik, E.A.
Green, R.P.
Cockburn, J.W.
Steer, M.J.
Airey, R.J.
Hopkinson, M.
Offermans, P.
Koenraad, P.M.
Wolter, J.H.

January 2005

We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

Liu FQ
Zhang QS
Zhang YZ
Ding D
Xu B
Wang ZG
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2001

The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...

Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser

Guo, Y
Liu, FQ
Liu, JQ
Li, CM
Wang, ZG
Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn

January 2005

The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam ep...

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

Liu FQ
Zhang YZ
Zhang QS
Ding D
Xu B
Wang ZG
Jiang DS
Sun BQ
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2000

We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...

Strain-compensated quantum cascade lasers operating at room temperature

Liu FQ
Ding D
Xu B
Zhang YZ
Zhang QS
Wang ZG
Jiang DS
Sun BQ
Liu FQ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2000

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...

Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications

Badura, M.
Bielak, K.
Ściana, B.
Radziewicz, D.
Pucicki, D.
Dawidowski, W.
Żelazna, K.
Kudrawiec, R.
Tłaczała, M.

January 2016

Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of t...

Solid source MBE growth of quantum cascade lasers

Liu FQ (Liu Feng-Qi)
Li L (Li Lu)
Wang LJ (Wang Lijun)
Liu JQ (Liu Junqi)
Zhang W (Zhang Wei)
Zhang QD (Zhang Quande)
Liu WF (Liu Wanfeng)
Lu QY (Lu Quanyong)
Wang ZG (Wang Zhanguo)
Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: fqliu@red.semi.ac.cn

January 2009

High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...

Room Temperature Operation Of Quantum Cascade Lasers Monolithically Integrated Onto A Lattice-Mismatched Substrate

Go, R.
Krysiak, H.
Fetters, M.
Figueiredo, P.
Suttinger, M.

January 2018

Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...

New frontiers in quantum cascade lasers and applications

Capasso, F
Gmachl, C
Paiella, R
Tredicucci, A
Hutchinson, AL
Sivco, DL
Baillargeon, JN
Cho, AY
Liu, HC

January 2000

Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...

Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser

Li CM
Liu FQ
Zhang ZY
Meng XQ
Jin P
Wang ZG
Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2003

Double X-ray diffraction has been used to investigate InGaAs/InAlAs quantum cascade (QC) laser grown...

Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Abstract

Extracted data

Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Abstract

Extracted data

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