By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum dots embedded in the quantum well of an (AlGa)As/GaAs/(AlGa)As heterostructure, we find evidence for the existence of excited states of the quantum dots which exhibit a 2p/sub z/-like character along the growth direction z. The states are investigated by magnetotunneling spectroscopy with magnetic fields applied parallel and perpendicular to
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized gr...
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
Contains fulltext : 35691.pdf (publisher's version ) (Closed access
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized gr...
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
By studying the resonant tunneling of electrons through self-assembled ring-shaped (InGa)As quantum ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a ...
Contains fulltext : 35691.pdf (publisher's version ) (Closed access
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-t...
We have fabricated quantum dots by locally straining InxGa1−xAs quantum wells with self-organized gr...
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...