The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width ?96 nm is achieved from a single QD layer with InAs thicknes
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaA...
By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots ...
The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...
The authors report the effect of growth temperature and monolayer coverage on areal density and pho...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
Epitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics....
Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as th...
We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superlumines...
A chirped multiple quantum dot (QD) structure is introduced as a means to controllably broaden the g...
The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy ...
We have determined the growth conditions which result in a narrow linewidth and room temperature emi...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaA...
By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots ...
The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...
The authors report the effect of growth temperature and monolayer coverage on areal density and pho...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
Epitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics....
Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as th...
We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superlumines...
A chirped multiple quantum dot (QD) structure is introduced as a means to controllably broaden the g...
The InAs quantum dots (QDs) on an AlAs layer are grown on GaAs substrates by molecular beam epitaxy ...
We have determined the growth conditions which result in a narrow linewidth and room temperature emi...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
Long wavelength light emission was realized by capping InAs quantum dots (QDs) with short period GaA...
By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots ...
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