Postgrowth tuning of semiconductor vertical cavities for multiple-wavelength laser arrays

Combined lateral-vertical oxidn. of AlGaAs was investigated as a means of tuning the resonant wavelength of a semiconductor microcavity after epitaxial growth. This technique can provide arrays with a wavelength spread equal to the cavity's free spectral range with a single postgrowth processing step. Design issues for multiple-wavelength vertical-cavity laser arrays using this postgrowth tuning technique are discussed, comparing the performance of devices with all-semiconductor and partially or totally oxidized Bragg mirrors. Exptl. results are presented on arrays with a 48-nm lasing span around 970 nm, using partially and totally oxidized mirrors. [on SciFinder (R)