The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 micro m were studied by temp.-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but sat. faster as the excitation is increased, due to the lower d. of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. [on SciFinder (R)
Self-assembled InAs/GaAs quantum dots were grown at very low InAs growth rate to form sparse and lar...
The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum d...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantu...
The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam ep...
InAs quantum dots (QDs) were grown by MBE on different InGaAs or GaAs surface layers to study the ef...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
The authors have studied the emission properties of individual InAs quantum dots ??QDs?? grown inan ...
The spectral dependence of the photoluminescence recombination lifetime has been measured for indivi...
Self-assembled InAs/GaAs quantum dots were grown at very low InAs growth rate to form sparse and lar...
The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum d...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantu...
The authors investigated a set of self-assembled InAs/GaAs quantum dots (QDs) formed by mol. beam ep...
InAs quantum dots (QDs) were grown by MBE on different InGaAs or GaAs surface layers to study the ef...
We present the time-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emi...
The authors have studied the emission properties of individual InAs quantum dots ??QDs?? grown inan ...
The spectral dependence of the photoluminescence recombination lifetime has been measured for indivi...
Self-assembled InAs/GaAs quantum dots were grown at very low InAs growth rate to form sparse and lar...
The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum d...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...