Experimental investigation of N-MOS inversion layers in the electric quantum limit

The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \"thick\" oxides. [on SciFinder (R)