The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting lasers. A periodic gain structure allows more strained wells to be used than in conventional multiquantum-well devices, offering advantages for high-power devices. Aluminium ohmic contacts grown by molecular beam epitaxy are used on lasers for the first tim
We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...
The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting...
Copyright 2005 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/87/16...
We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wa...
The factors affecting the performance of GalnP/AIGalnP vertical-cavity surface-emitting lasers (VCSE...
We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by us...
Vertical-cavity surface emitting lasers (VCSELs) are interesting devices because of their low-cost m...
The factors affecting the performance of GalnP/AlGalnP vertical-cavity surface-emitting lasers (VCSE...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL...
[[abstract]]© 2002 Elsevier - In this article, we propose a new process method to improve the light ...
Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic che...
In this paper we present our latest results on the design, fabrication and characterization of metal...
We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...
The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting...
Copyright 2005 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/87/16...
We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wa...
The factors affecting the performance of GalnP/AIGalnP vertical-cavity surface-emitting lasers (VCSE...
We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by us...
Vertical-cavity surface emitting lasers (VCSELs) are interesting devices because of their low-cost m...
The factors affecting the performance of GalnP/AlGalnP vertical-cavity surface-emitting lasers (VCSE...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL...
[[abstract]]© 2002 Elsevier - In this article, we propose a new process method to improve the light ...
Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic che...
In this paper we present our latest results on the design, fabrication and characterization of metal...
We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...