Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

This paper deals with the deposition of a-C:H and a-Si:H using the expanding thermal arc technique. The method is compared with other deposition techniques. The basics of the technique are explained and recent results on the deposition of high-quality a-C:H and a-Si:H are discussed. It is shown that high rates, for a-Si:H and for a-C:H, are possible without loss of quality