Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by alatt≃5×10-
For the first time the effect of increasing the Schottky barrier's Al content of InP-based InAlAs-In...
This paper presents 1/f noise measurements on Si d-doped GaAs structures. The samples are characteri...
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxid...
Measurements of 1/f noise were performed including and excluding the influence of the contacts forme...
In contrast to traditional metal-semiconductor (i.e., Schottky) junctions, molecular beam epitaxy (M...
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between...
Some experimental techniques for low-frequency resistance noise measurements are discussed. The crit...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
Recent experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for th...
We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra o...
This paper presents experimental data on 1/f3/2 low frequency noise in GaAs devices. Analysis of exp...
For the first time the effect of increasing the Schottky barrier's Al content of InP-based InAlAs-In...
This paper presents 1/f noise measurements on Si d-doped GaAs structures. The samples are characteri...
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxid...
Measurements of 1/f noise were performed including and excluding the influence of the contacts forme...
In contrast to traditional metal-semiconductor (i.e., Schottky) junctions, molecular beam epitaxy (M...
This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between...
Some experimental techniques for low-frequency resistance noise measurements are discussed. The crit...
Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models...
Recent experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are given for th...
We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra o...
This paper presents experimental data on 1/f3/2 low frequency noise in GaAs devices. Analysis of exp...
For the first time the effect of increasing the Schottky barrier's Al content of InP-based InAlAs-In...
This paper presents 1/f noise measurements on Si d-doped GaAs structures. The samples are characteri...
The chapter is intended to provide the reader with means to reduce low‐frequency noise in Metal-Oxid...
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