An apparatus suitable for plasma surface treating (e.g., forming a membrane layer on a substrate surface) comprises a plasma generation section which is operable at least at substantially atmospheric pressure and is in communication via at least one plasma inlet (e.g., a nozzle) with an enclosed plasma treating section which is operable at a lower pressure than the plasma generation section, and wherein the plasma treating-section is in communication with an inlet for a fluid (e.g., polymerizable) reactant used to form a layer on the substrate surface
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time durin...
The paper describes the possibilities of a low pressure plasma treatment of polymer surfaces to adap...
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least...
An apparatus suitable for plasma surface treating (e.g., forming a membrane layer on a substrate sur...
The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane ...
The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane ...
A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice t...
A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice t...
Plasma treatment apparatus for treating a substrate (6) comprising at least two opposing electrodes ...
Substrate structure comprising a substrate (6) and a plasma grown layer (6a). The surface of the res...
DE 102005059706 A1 UPAB: 20070927 NOVELTY - Method for preparing a plasma-polymer separation layer (...
DE 10322696 B UPAB: 20050207 NOVELTY - Plasma-assisted treatment of predetermined surface areas of a...
A method of improved anti-corrosion properties of thin films is provided that includes using an argo...
A thermal and non-thermal plasma activated water reactor system is provided that includes a reaction...
In a process and device for depositing an at least partially crystalline silicon layer a plasma is g...
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time durin...
The paper describes the possibilities of a low pressure plasma treatment of polymer surfaces to adap...
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least...
An apparatus suitable for plasma surface treating (e.g., forming a membrane layer on a substrate sur...
The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane ...
The invention relates to an apparatus suitable for plasma surface treating (e.g. forming a membrane ...
A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice t...
A method for treating substrate surfaces (e.g. etching and deposition) using a plasma. In practice t...
Plasma treatment apparatus for treating a substrate (6) comprising at least two opposing electrodes ...
Substrate structure comprising a substrate (6) and a plasma grown layer (6a). The surface of the res...
DE 102005059706 A1 UPAB: 20070927 NOVELTY - Method for preparing a plasma-polymer separation layer (...
DE 10322696 B UPAB: 20050207 NOVELTY - Plasma-assisted treatment of predetermined surface areas of a...
A method of improved anti-corrosion properties of thin films is provided that includes using an argo...
A thermal and non-thermal plasma activated water reactor system is provided that includes a reaction...
In a process and device for depositing an at least partially crystalline silicon layer a plasma is g...
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time durin...
The paper describes the possibilities of a low pressure plasma treatment of polymer surfaces to adap...
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least...