With the introduction of Extreme Ultraviolet (EUV) lithography, the control of contamination has become crucial. Sources for contamination in EUV lithography scanners are not limited to only particle generation and release inside the scanner environment but may be introduced from outside as well, e.g. through translational and/or rotational (robotic) feedthroughs.In this contribution we highlight our joint (TU/e and VDL ETG) research efforts aimed at the development of plasma-enabled contamination control strategies. The focus in this research is on airborne particles immersed in a low pressure gas flow that interact with both the afterglow of a plasma and an externally applied electric field.A flexible experimental setup has been developed...
The demand for ever smaller and faster electronic devices is a drive for the IC and memory industry ...
In this letter, we present charge measurements of micro-particles in the spatial afterglow (remote p...
In order to meet the demand of increasing computer speed and memory capacity, industries are strivin...
With the introduction of Extreme Ultraviolet (EUV) lithography, the control of contamination has bec...
With the introduction of EUV lithography, the control of contamination in advanced semiconductor pro...
One of the critical issues still facing the implementation of extreme ultraviolet lithography (EUVL)...
In this work, charge control of micro-particles from ~ -40 to +10 elementary charges is presented. T...
After a long period of relatively low interest, science related to effects in the Extreme Ultraviole...
In extreme ultraviolet (EUV) lithography, ionic and particulate debris coming from the plasma source...
A major obstacle in the implementation of extreme ultraviolet (EUV) light photolithography in produc...
Extreme Ultraviolet Lithography (EUVL) is a leading lithography technology for the sub-32 nm chip ma...
Driven by the continuous decrease of the length scales of fabricated semiconductor structures, ultra...
With the arrival of the next generation extreme ultraviolet (EUV) lithography tools, printed feature...
The demand for ever smaller and faster electronic devices is a drive for the IC and memory industry ...
In this letter, we present charge measurements of micro-particles in the spatial afterglow (remote p...
In order to meet the demand of increasing computer speed and memory capacity, industries are strivin...
With the introduction of Extreme Ultraviolet (EUV) lithography, the control of contamination has bec...
With the introduction of EUV lithography, the control of contamination in advanced semiconductor pro...
One of the critical issues still facing the implementation of extreme ultraviolet lithography (EUVL)...
In this work, charge control of micro-particles from ~ -40 to +10 elementary charges is presented. T...
After a long period of relatively low interest, science related to effects in the Extreme Ultraviole...
In extreme ultraviolet (EUV) lithography, ionic and particulate debris coming from the plasma source...
A major obstacle in the implementation of extreme ultraviolet (EUV) light photolithography in produc...
Extreme Ultraviolet Lithography (EUVL) is a leading lithography technology for the sub-32 nm chip ma...
Driven by the continuous decrease of the length scales of fabricated semiconductor structures, ultra...
With the arrival of the next generation extreme ultraviolet (EUV) lithography tools, printed feature...
The demand for ever smaller and faster electronic devices is a drive for the IC and memory industry ...
In this letter, we present charge measurements of micro-particles in the spatial afterglow (remote p...
In order to meet the demand of increasing computer speed and memory capacity, industries are strivin...