Low-temperature IGZO technology on transparent plastic foil by atmospheric spatial atomic layer deposition
- Frijters, Corné
- Verbeek, Roy
- de Haas, Gerard
- Ke, Tung Huei
- Vandenplas, Erwin
- Ameys, Marc
- van der Steen, Jan Laurens
- Gelinck, Gerwin
- Meulenkamp, Eric
- Poodt, Paul
- Kronemeijer, Auke
- Katsouras, Ilias
DOIAbstract
We use sALD to deposit IGZO and Al2O3 layers in top-gated self-aligned TFTs, achieving a low-temperature process flow (d200oC). We attain mobility of 8 cm2/Vs and switch-on voltage of -0.1 V for transistors with channel lengths down to 1 μm, enabling a 200 ppi QVGA display on transparent PEN foil.</p
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