Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma

With a cascaded arc expanding thermal plasma intrinsic amorphous silicon can be deposited at growth rates varying from 0.2 to 10 nm/s. With increasing growth rate good material is obtained at higher deposition temperatures. At higher deposition temperatures the p-layer is deteriorated when the cell is deposited in a p-i-n sequence. A buffer layer can be used as a 'soft start' for the ETP layer and as protection of the p-layer from high deposition temperatures. In this paper we will discuss the effect on p-i-n solar cells when a buffer layer is incorporated.