We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorption modulator (EAM) fabricated inside a generic photonic integration platform. Successful transmission over 1.5 km using 51-taps equalization is presented.</p
Leveraging client optics based on intensity modulation and direct detection for point-to-point inter...
With next-generation optical interconnects for data centers aiming for 0.8 Tb/s or 1.6 Tb/s, 100 Gba...
We present experimental results of an EAM modulator for silicon photonic transceivers developed on a...
We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorpt...
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2...
We demonstrate 50GHz and above 55GHz E/O bandwidth for 100μm and 50μm-long electro-absorption modula...
As next-generation data center optical interconnects aim for 0.8 Tb/s or 1.6 Tb/s, serial rates up t...
The growing demand for fast, reliable and low power interconnect systems requires the development of...
International audienceWe present in this paper the vertical integration of an electro-absorption mod...
We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized wi...
Optical transmitters for four-level pulse amplitude modulation (PAM-4) have attracted a significant ...
We experimentally investigate the transmission performance of 56 Gb/s four-level pulse amplitude mod...
Faced with surging datacenter traffic demand, system designers are turning to multi-level optical mo...
A 42.8 Gbit/s NRZ transmitter based on electro-absorption modulation (EAM) is demonstrated experimen...
Leveraging client optics based on intensity modulation and direct detection for point-to-point inter...
With next-generation optical interconnects for data centers aiming for 0.8 Tb/s or 1.6 Tb/s, 100 Gba...
We present experimental results of an EAM modulator for silicon photonic transceivers developed on a...
We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorpt...
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2...
We demonstrate 50GHz and above 55GHz E/O bandwidth for 100μm and 50μm-long electro-absorption modula...
As next-generation data center optical interconnects aim for 0.8 Tb/s or 1.6 Tb/s, serial rates up t...
The growing demand for fast, reliable and low power interconnect systems requires the development of...
International audienceWe present in this paper the vertical integration of an electro-absorption mod...
We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized wi...
Optical transmitters for four-level pulse amplitude modulation (PAM-4) have attracted a significant ...
We experimentally investigate the transmission performance of 56 Gb/s four-level pulse amplitude mod...
Faced with surging datacenter traffic demand, system designers are turning to multi-level optical mo...
A 42.8 Gbit/s NRZ transmitter based on electro-absorption modulation (EAM) is demonstrated experimen...
Leveraging client optics based on intensity modulation and direct detection for point-to-point inter...
With next-generation optical interconnects for data centers aiming for 0.8 Tb/s or 1.6 Tb/s, 100 Gba...
We present experimental results of an EAM modulator for silicon photonic transceivers developed on a...