Large-area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm 2 . Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat-panel display industry.