We have designed, fabricated and characterized an electro-absorption modulator integrated with generic technology on a semi-insulating substrate. The modulator operates at 64Gb/s with 6dB dynamic extinction ratio, a bias voltage of -2.2V and a voltage swing of 3.5V
We study the influence of electrical connection methods on the high speed performance of electro-abs...
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2...
We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorpt...
We have designed, fabricated and characterized an electro-absorption modulator integrated with gener...
We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized wi...
We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously ...
We demonstrate 50GHz and above 55GHz E/O bandwidth for 100μm and 50μm-long electro-absorption modula...
We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is ...
We study the influence of electrical connection methods on the high speed performance of electro-abs...
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2...
We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorpt...
We have designed, fabricated and characterized an electro-absorption modulator integrated with gener...
We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized wi...
We propose and evaluate by simulation a novel membrane electro-Absorption modulator heterogeneously ...
We demonstrate 50GHz and above 55GHz E/O bandwidth for 100μm and 50μm-long electro-absorption modula...
We propose a novel membrane electro-absorption modulator (EAM) integrated on silicon. The device is ...
We study the influence of electrical connection methods on the high speed performance of electro-abs...
We demonstrate PDM-PAM4 generation for the first time from an integrated EAM-based chip with 0.5 mm2...
We demonstrate a 56 GBaud (112 Gb/s) pulse-amplitude modulation (PAM-4) of an L-band electro-absorpt...