Organic thin-film transistors with anodized gate dielectric patterned by self-aligned embossing on flexible substrates

An upscalable, self-aligned patterning technique for manufacturing high- performance, flexible organic thin-film transistors is presented. The structures are self-aligned using a single-step, multi-level hot embossing process. In combination with defect-free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 μm are realized with high reproducibility. Resulting on-off ratios of 4 × 10 6 and mobilities as high as 0.5 cm 2 V -1 s -1 are achieved, indicating a stable process with potential to large-area production with even much smaller structures.