We investigate the optical emission of wurtzite GaP/Al0.4Ga0.6P core/shell nanowires (NWs) transferred to a SiOx substrate to demonstrate a high degree of waveguiding of the emitted photoluminescence (PL) signal. By analysing the Fabry-Pérot mode spacing in combination with calculations of the guided modes in the NWs, we calculate a very high refractive index of bulk WZ GaP of 4.2 at a wavelength of 600 nm. The measured quality factors up to 600 indicate the excellent optical quality of the nanowire resonator.</p
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...
Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region o...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...
We investigate the optical emission of wurtzite GaP/Al0.4Ga0.6P core/shell nanowires (NWs) transferr...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spec...
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-...
Wurtzite (WZ) GaAs nanowires (NWs) are of considerable interest for novel optoelectronic application...
The optical properties for wurtzite (WZ) Bulk GaP and GaP nanowires (GaP-NWs) in hexagonal(circular)...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
We compare the optical response of wurtzite and zinc blende GaP nanowire arrays for varying geometry...
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a mo...
Terahertz emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond opt...
International audienceWe report on the structural and optical properties of GaAs 0.7 P 0.3 /GaP core...
We used spatially resolved photoluminescence (PL) and resonant Raman spectroscopy to study the elect...
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...
Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region o...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...
We investigate the optical emission of wurtzite GaP/Al0.4Ga0.6P core/shell nanowires (NWs) transferr...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Wurtzite gallium phosphide (WZ GaP) has been predicted to exhibit a direct bandgap in the green spec...
We report resonant Raman scattering (RRS) by the TO, LO, and 2 LO modes of single wurtzite and zinc-...
Wurtzite (WZ) GaAs nanowires (NWs) are of considerable interest for novel optoelectronic application...
The optical properties for wurtzite (WZ) Bulk GaP and GaP nanowires (GaP-NWs) in hexagonal(circular)...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
We compare the optical response of wurtzite and zinc blende GaP nanowire arrays for varying geometry...
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a mo...
Terahertz emission by AlGaAs nanowires grown on a GaAs substrate under excitation by femtosecond opt...
International audienceWe report on the structural and optical properties of GaAs 0.7 P 0.3 /GaP core...
We used spatially resolved photoluminescence (PL) and resonant Raman spectroscopy to study the elect...
A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-confinement...
Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region o...
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is...