Deposition temperature dependence of material and Si surface passivaion properties of O3-based atomic layer deposited Al2O3-based films and stacks

The material composition and the Si surface passivation of aluminum oxide (Al2O3) films prepared by atomic layer deposition using Al(CH3)3 and O3 as precursors were investigated for deposition temperatures (T Dep) between 200¿°C and 500¿°C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H]¿=¿3 at. % at 200¿°C to [H]