This paper reports design, efficiency, and measurement results of the process variation and temperature monitors for yield analysis and enhancement in deep-submicron CMOS circuits. Additionally, to guide the verification process with the information obtained through monitoring, two efficient algorithms based on an expectation-maximization method and adjusted support vector machine classifier are proposed. The monitors and algorithms are evaluated on a prototype 12-bit analog-to-digital converter fabricated in standard single poly six-metal 90-nm CMOS
A method for diagnosing process parameter variations from measurements in analog circuits. The diagn...
Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient oper...
The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In...
This paper reports design, efficiency, and measurement results of the process variation and temperat...
This work presents a novel approach to optimize digital integrated circuits yield referring to speed...
A new approach for efficient estimation of die-level process parameter variations based on the expec...
Integrated Circuit (IC) designers have always faced the problem of small deviations in parameters of...
For more than three decades, aggressive scaling of transistor dimensions has been successful in achi...
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of v...
Scaling of CMOS technology into the deep-submicron regime has made superior device performance and h...
Process variability, in addition to wide temperature and supply voltage variation ranges, severely d...
The need for efficient and accurate detection schemes to assess the impact of process variations on ...
A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynam...
dissertationWith the scaling of MOSFET dimensions and the performance enhancement features in the MO...
Abstract—This report is to present some results of the project funded by National Science Council in...
A method for diagnosing process parameter variations from measurements in analog circuits. The diagn...
Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient oper...
The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In...
This paper reports design, efficiency, and measurement results of the process variation and temperat...
This work presents a novel approach to optimize digital integrated circuits yield referring to speed...
A new approach for efficient estimation of die-level process parameter variations based on the expec...
Integrated Circuit (IC) designers have always faced the problem of small deviations in parameters of...
For more than three decades, aggressive scaling of transistor dimensions has been successful in achi...
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of v...
Scaling of CMOS technology into the deep-submicron regime has made superior device performance and h...
Process variability, in addition to wide temperature and supply voltage variation ranges, severely d...
The need for efficient and accurate detection schemes to assess the impact of process variations on ...
A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynam...
dissertationWith the scaling of MOSFET dimensions and the performance enhancement features in the MO...
Abstract—This report is to present some results of the project funded by National Science Council in...
A method for diagnosing process parameter variations from measurements in analog circuits. The diagn...
Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient oper...
The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In...