InP/InGaAs photodetector on SOI circuitry
- Binetti, P.R.A.
- Leijtens, X.J.M.
- Vries, de, T.
- Oei, Y.S.
- Di Cioccio, L.
- Fédéli, J.-M.
- Lagahe, C.
- Van Campenhout, J.
- Thourhout, Van, D.
- Veldhoven, van, P.J.
- Nötzel, R.
- Smit, M.K.
Publication date
January 2009
DOI Publisher
Institute of Electrical and Electronics Engineers Language
EnglishAbstract
We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing
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