We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performance MBE grown structures
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs) that emit...
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Metalorganic vapour phase epitaxy (MOVPE) has been successfully introduced by our group as an altern...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of t...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs) that emit...
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quantum cascade (QC) lasers are a fundamentally new semiconductor laser source designed by methods o...
High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source...
Metalorganic vapour phase epitaxy (MOVPE) has been successfully introduced by our group as an altern...
Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Inven...
Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of t...
Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical powe...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP subst...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) materi...
Details of the design, growth, fabrication, and operation of quantum cascade lasers (QCLs) that emit...