Interface study on heterostructured GaP-GaAs nanowires
- Borgström, M.T.
- Verheijen, M.A.
- Immink, W.G.G.
- Smet, de, T.
- Bakkers, E.P.A.M.
Publication date
January 2006
DOIAbstract
The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH3 molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer growth, that is, the sharpness of the interface improves with reducing temperature
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