Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (311)B by molecular-beam epitaxy. During stacking, the SL template self-organizes into a two-dimensionally ordered strain modulated network on a mesoscopic length scale. The QDs form a lattice of separated groups of closely spaced ordered QDs whose number can be controlled by the GaAs separation layer thickness on top of the SL template. The QD groups exhibit excellent optical properties up to room temperature. Temperature dependent photoluminescence measurements exhibit an unusual behaviour of the full-width at half-maximum revealing carrier redistribution solel...
Ordered arrays of quantum dots (QDs) are created by self-organized anisotropic strain engineering of...
Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-l...
A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/A...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
Lateral InAs quantumdot (QD) molecules are created by self-organized anisotropic strain engineering ...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotrop...
Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic str...
We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineer...
The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized aniso...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
Ordered arrays of quantum dots (QDs) are created by self-organized anisotropic strain engineering of...
Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-l...
A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/A...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
Lateral InAs quantumdot (QD) molecules are created by self-organized anisotropic strain engineering ...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotrop...
Formation of laterally ordered single InAs quantum dot (QD) arrays by self-organized anisotropic str...
We demonstrate the formation of well-defined InAs quantum dot (QD) arrays by self-organized engineer...
The formation of laterally ordered linear InAs quantum dot (QD) arrays based on self-organized aniso...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
Ordered arrays of quantum dots (QDs) are created by self-organized anisotropic strain engineering of...
Laterally ordered InGaAs quantum dot (QD) arrays, InAs QD molecules, and single InAs QDs in a spot-l...
A matrix of closely packed cells develops during molecular-beam epitaxy of In/sub 0.35/Ga/sub 0.65/A...