Towards vertical III-V nanowire devices on silicon
- Bakkers, E.P.A.M.
- Borgström, M.T.
- Einden, Van Den, W.
- Weert, van, M.H.M.
- Minot, E.D.
- Kelkensberg, F.
- Kouwen, Van, M.P.
- Dam, Van, J.A.
- Kouwenhoven, L.P.
- Zwiller, V.
- Helman, A.
- Wunnicke, O.
- Verheijen, M.A.
Publication date
January 2007
DOI Publisher
Institute of Electrical and Electronics EngineersAbstract
In this paper, we have grown III-V nanowires by metal organic vapor phase epitaxy (MOVPE) using the vapor-liquid-solid (VLS) growth mechanism. In addition, the author discusses the fabrication and characterization of reproducible axial InP nanowire LED devices
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