We have investigated the dynamics of the ambipolar transport of photogenerated electrons and holes induced by surface acoustic waves in GaAs quantum wires by using photoluminescence measurements with spatial and temporal resolutions. This technique allows us to trace the trajectory of charge packages in real time and to access the dynamics of radiative trapping centers. We identify two different kinds of trapping defects, which capture preferentially either holes or electron
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
635-641Measurements of ps time resolved luminescence spectra, performed on a GaAS/AlAs quantum wire...
Spatial relaxation processes of photoexcited carriers in GaAs structures are studied by means of pho...
We have investigated the dynamics of the ambipolar transport of photogenerated electrons and holes i...
We have investigated the dynamics of photogenerated carriers in GaAs quantum wires during their tran...
The ambipolar transport of photogenerated electron-hole pairs by surface acoustic waves (SAWs) in co...
We report direct measurements of carrier trapping from three-dimensional states into spatially confi...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of...
We report electrical transport and photoluminescence measurements of modulation-doped GaAs/AlGaAs V-...
We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surfac...
We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated ele...
Single GaAs v-groove quantum wire structures, of varying width, have been studied using near-field a...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
Gallium arsenide is piezoelectric, so it is possible to generate coupled mechanical and electrical s...
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
635-641Measurements of ps time resolved luminescence spectra, performed on a GaAS/AlAs quantum wire...
Spatial relaxation processes of photoexcited carriers in GaAs structures are studied by means of pho...
We have investigated the dynamics of the ambipolar transport of photogenerated electrons and holes i...
We have investigated the dynamics of photogenerated carriers in GaAs quantum wires during their tran...
The ambipolar transport of photogenerated electron-hole pairs by surface acoustic waves (SAWs) in co...
We report direct measurements of carrier trapping from three-dimensional states into spatially confi...
We have investigated the transport of carriers in GaAs using time resolved optical spectroscopy with...
Report for the scientific sojourn carried out at the Paul Drude Institut für Festkörperelektronik of...
We report electrical transport and photoluminescence measurements of modulation-doped GaAs/AlGaAs V-...
We demonstrate the ambipolar acoustic transport of optically generated electrons and holes by surfac...
We demonstrate the optically detected long-range (>100 µm) ambipolar transport of photogenerated ele...
Single GaAs v-groove quantum wire structures, of varying width, have been studied using near-field a...
The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoe...
Gallium arsenide is piezoelectric, so it is possible to generate coupled mechanical and electrical s...
Quantum confinement of carriers in semiconductors is at the heart of next generation technologies. W...
635-641Measurements of ps time resolved luminescence spectra, performed on a GaAS/AlAs quantum wire...
Spatial relaxation processes of photoexcited carriers in GaAs structures are studied by means of pho...