The band-edge optical absorption of EuTe and EuSe, grown by molecular beam epitaxy, was measured, using circularly polarized light, in the Faraday configuration, at T=1.8 K. In thin layers (less than 0.4 µm ), a doublet of absorption lines could be observed, with a full width at half maximum of about 50 meV in EuTe and 80 meV in EuSe. The lines are separated by about 200 meV in EuTe and 300 meV in EuSe, and they show a strong magnetic circular dichroism. The oscillator strength for these lines increases by a factor of almost 20 when the antiferromagnetic order is changed to ferromagnetic by the application of an external magnetic field. Faraday rotation in the transparency gap shows a strongly nonlinear dependence on the intensity of the ma...
En dessous de ~ 150 °K les semiconducteurs magnétiques EuS, EuSe et EuTe émettent dans l'infrarouge ...
Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the ba...
The new era of spintronics promises the development of nanodevices, where the electron spin will be...
The band-edge optical absorption of EuTe and EuSe, grown by molecular beam epitaxy, was measured, us...
Os calcógenos de európio (EuX, onde X representa O, S, Se ou Te) possuem propriedades magneto-óptica...
The absorption threshold in EuTe and EuSe was investigated as a function of applied magnetic field i...
We report an investigation of the optical absorption spectrum, using non-polarized light, in Pb xEu1...
We report an investigation of the optical absorption spectrum, using non-polarized light, in PbxEu1−...
The band-edge optical absorption in EuTe is studied in the framework of the 5d conduction band atomi...
The magnetic circular and linear dichroisms (MCD and MLD respectively) of isolated Eu2+ ions (in CaF...
Een vaste stof bestaat uit atomen, die elk uit een kern met elektronen zijn opgebouwd. De vaste stof...
A investigação das propriedades ópticas e sua relação com as propriedades magnéticas dos semiconduto...
The magnetic response of the near-band-edge optical properties is studied in EuTe layers. In several...
De constante drang naar technologische innovatie en fundamentele kennisvergaring zorgt ervoor dat er...
The magnetic europium chalcogenide semiconductors EuTe and EuSe are investigated by the spectroscopy...
En dessous de ~ 150 °K les semiconducteurs magnétiques EuS, EuSe et EuTe émettent dans l'infrarouge ...
Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the ba...
The new era of spintronics promises the development of nanodevices, where the electron spin will be...
The band-edge optical absorption of EuTe and EuSe, grown by molecular beam epitaxy, was measured, us...
Os calcógenos de európio (EuX, onde X representa O, S, Se ou Te) possuem propriedades magneto-óptica...
The absorption threshold in EuTe and EuSe was investigated as a function of applied magnetic field i...
We report an investigation of the optical absorption spectrum, using non-polarized light, in Pb xEu1...
We report an investigation of the optical absorption spectrum, using non-polarized light, in PbxEu1−...
The band-edge optical absorption in EuTe is studied in the framework of the 5d conduction band atomi...
The magnetic circular and linear dichroisms (MCD and MLD respectively) of isolated Eu2+ ions (in CaF...
Een vaste stof bestaat uit atomen, die elk uit een kern met elektronen zijn opgebouwd. De vaste stof...
A investigação das propriedades ópticas e sua relação com as propriedades magnéticas dos semiconduto...
The magnetic response of the near-band-edge optical properties is studied in EuTe layers. In several...
De constante drang naar technologische innovatie en fundamentele kennisvergaring zorgt ervoor dat er...
The magnetic europium chalcogenide semiconductors EuTe and EuSe are investigated by the spectroscopy...
En dessous de ~ 150 °K les semiconducteurs magnétiques EuS, EuSe et EuTe émettent dans l'infrarouge ...
Third harmonic generation (THG) has been studied in europium selenide EuSe in the vicinity of the ba...
The new era of spintronics promises the development of nanodevices, where the electron spin will be...