The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at high deposition rates (typically ∼200 Å/s) has been investigated. The structural film properties of the a-SiNx:H are reported for various process conditions and the application of the material as antireflection coating on (multi)crystalline silicon solar cells is studied. Furthermore, the performance of the material for surface and bulk passivation is investigated.</p
Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...
AbstractAn Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is under develo...
The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for ...
The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...
Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...
High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...
The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...
Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...
AbstractAn Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is under develo...
The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for ...
The feasibility of the new 'Expanding Thermal Plasma' technique for the deposition of a-SiNx:H at hi...
Driven by the need for improvement of the economical competitiveness of photovoltaic energy, the fea...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
This paper addresses the effects of a short high-temperature step, corresponding to the firing of th...
Silicon nitride (a-SiNx:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s...
High-quality surface and bulk passivation of crystalline silicon solar cells has been obtained under...
We present hydrogenated amorphous silicon nitride (a-SiNx:H) films for multicrystalline silicon (mc-...
The influence of a short high-temperature step, comparable to the so-called firing of the metalliz...
The influence of a short high-temperature step, comparable to the so-called "firing" of the metalliz...
Different systems for the deposition of silicon nitride (SiN) as a passivating antireflection coatin...
AbstractAn Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is under develo...
The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for ...