A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and DC + pulse measurements on 2 and 3 terminal semiconductor devices, the later ones in 3 selectable common-configurations. Tests can be done on packaged devices and on-wafer; temperature dependency studied and time-depended features like trapping effects in GaN-based HEMTs. Novel is that once the overall test setup is assembled, no external hardware changes are neccesary for a full (automated) characterization of all quadrants of the I-V plot, and that in the pulse mode the V and I sampling point already can be at 8 ns from the leading edge, allowing measurements with very limited average device temperature increase
The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current a...
A pulsed characterization of gallium nitride (GaN) high-electron mobility transistors (HEMTs) under ...
The progress of electrical engineering and electronics has demanded the application of new materials...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
The paper introduces a new pulsed measurement system for the characterization of thermal and charge ...
The paper introduces a new pulsed measurement system for the characterization of thermal and charge ...
none6The paper introduces a new pulsed measurement system for the characterization of thermal and ch...
A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse me...
On-die testing can accelerate development of semiconductor devices, but poses certain challenges rel...
The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current a...
A pulsed characterization of gallium nitride (GaN) high-electron mobility transistors (HEMTs) under ...
The progress of electrical engineering and electronics has demanded the application of new materials...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A universal DC and pulsed I-V test set is presented, that allows automated DC-only, pulse-only and D...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
A new setup is proposed for the measurement of current-voltage pulsed characteristics of electron de...
The paper introduces a new pulsed measurement system for the characterization of thermal and charge ...
The paper introduces a new pulsed measurement system for the characterization of thermal and charge ...
none6The paper introduces a new pulsed measurement system for the characterization of thermal and ch...
A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse me...
On-die testing can accelerate development of semiconductor devices, but poses certain challenges rel...
The BVDS ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current a...
A pulsed characterization of gallium nitride (GaN) high-electron mobility transistors (HEMTs) under ...
The progress of electrical engineering and electronics has demanded the application of new materials...