Downstream ion and radical densities in an Ar-NH3 plasma generated by the expanding thermal plasma technique

A full characterization of the Ar-NH3 expanding thermal plasma source applied in industrial processes for high-rate silicon nitride deposition is presented in terms of abs. densities of reactive species such as ions and radicals. The ion compn. of the plasma was identified by mass spectrometry, while abs. ion d. information was obtained by Langmuir probe measurements. N radicals were detected by threshold ionization mass spectrometry, whereas NH and NH2 radicals were measured by cavity ringdown spectroscopy. It was found that the ion d. decreases from 1013 cm-3 in a pure Ar plasma to 1010-1011 cm-3 when NH3 is injected, with ArH+, NH+2, NH+3, NH+4 and H+3 being the most abundant ions. The densities of N and NH both sat. at a level of 3 * 1012 cm-3 at NH3 flows above 3 sccs while the d. of NH2 increases linearly with the NH3 flow and reaches a level of 4 * 1012 cm-3. When the plasma source current is increased, the densities of N and NH increase linearly, while the NH2 d. remains approx. const. Furthermore, it is revealed that most of the consumed NH3 is converted into N2 and H2 in the plasma. [on SciFinder (R)