Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Haffouz, S.
Rodermans, M.
Barrios, P. J.
Lapointe, J.
Raymond, S.
Lu, Z.
Poitras, D.

August 2010

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen, S.
Li, W.
Zhang, Z.
Childs, D.
Zhou, K.
Orchard, J.
Kennedy, K.
Hugues, M.
Clarke, E.
Ross, I.
Wada, O.
Hogg, R.

August 2015

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)...

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth

Haffouz, S.
Raymond, S.
Lu, Z. G.
Barrios, P. J.
Roy-Guay, D.
Wu, X.
Liu, J. R.
Poitras, D.
Wasilewski, Z. R.

November 2008

Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...

Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Li, L.H.
Rossetti, M.
Fiore, A.
Occhi, L.
Velez, C.

January 2005

A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...

Improved emission spectrum from quantum dot superluminescent light emitting diodes

Li, L.
Rossetti, M.
Fiore, A.
Occhi, L.
Velez, C.

January 2006

The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...

InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

Liu N
Jin P
Wang ZG
Liu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn

January 2005

Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...

Chirped multiple InAs quantum dot structure for wide spectrum device applications

Li, L.
Rossetti, M.
Fiore, A.

January 2005

A chirped multiple quantum dot (QD) structure is introduced as a means to controllably broaden the g...

Scaling quantum-dot light-emitting diodes to submicrometer sizes

Fiore, A.
Chen, J.X.
Ilegems, M.

January 2002

We introduce a device structure and a fabrication technique that allow the realization of efficient ...

High-power quantum-dot superluminescent diodes with p-doped active region

Rossetti, M.
Li, L.
Fiore, A.
Occhi, L.
Velez, C.
Mikhrin, S.
Kovsh, A.

January 2006

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Moda...

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

Sun ZZ
Ding D
Gong Q
Zhou W
Xu B
Wang ZG
Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 1999

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...

A novel application to quantum dot materials to the active region of superluminescent diodes

Zhang ZY
Meng XQ
Jin P
Li CM
Qu SC
Xu B
Ye XL
Wang ZG
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2002

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superlumines...

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Haffouz, S.
Rodermans, M.
Barrios, P. J.
Lapointe, J.
Raymond, S.
Lu, Z.
Poitras, D.

August 2010

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen, S.
Li, W.
Zhang, Z.
Childs, D.
Zhou, K.
Orchard, J.
Kennedy, K.
Hugues, M.
Clarke, E.
Ross, I.
Wada, O.
Hogg, R.

August 2015

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)...

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth

Haffouz, S.
Raymond, S.
Lu, Z. G.
Barrios, P. J.
Roy-Guay, D.
Wu, X.
Liu, J. R.
Poitras, D.
Wasilewski, Z. R.

November 2008

Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...

Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Li, L.H.
Rossetti, M.
Fiore, A.
Occhi, L.
Velez, C.

January 2005

A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...

Improved emission spectrum from quantum dot superluminescent light emitting diodes

Li, L.
Rossetti, M.
Fiore, A.
Occhi, L.
Velez, C.

January 2006

The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...

InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

Liu N
Jin P
Wang ZG
Liu, N, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: pengjin@red.semi.ac.cn

January 2005

Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...

Chirped multiple InAs quantum dot structure for wide spectrum device applications

Li, L.
Rossetti, M.
Fiore, A.

January 2005

A chirped multiple quantum dot (QD) structure is introduced as a means to controllably broaden the g...

Scaling quantum-dot light-emitting diodes to submicrometer sizes

Fiore, A.
Chen, J.X.
Ilegems, M.

January 2002

We introduce a device structure and a fabrication technique that allow the realization of efficient ...

High-power quantum-dot superluminescent diodes with p-doped active region

Rossetti, M.
Li, L.
Fiore, A.
Occhi, L.
Velez, C.
Mikhrin, S.
Kovsh, A.

January 2006

We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Moda...

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

Sun ZZ
Ding D
Gong Q
Zhou W
Xu B
Wang ZG
Sun ZZ,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 1999

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...

A novel application to quantum dot materials to the active region of superluminescent diodes

Zhang ZY
Meng XQ
Jin P
Li CM
Qu SC
Xu B
Ye XL
Wang ZG
Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2002

We have proposed a new superluminescent diodes (SLD) aimed at wide spectrum-quantum dot superlumines...

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Haffouz, S.
Rodermans, M.
Barrios, P. J.
Lapointe, J.
Raymond, S.
Lu, Z.
Poitras, D.

August 2010

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...

GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen, S.
Li, W.
Zhang, Z.
Childs, D.
Zhou, K.
Orchard, J.
Kennedy, K.
Hugues, M.
Clarke, E.
Ross, I.
Wada, O.
Hogg, R.

August 2015

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)...

Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth

Haffouz, S.
Raymond, S.
Lu, Z. G.
Barrios, P. J.
Roy-Guay, D.
Wu, X.
Liu, J. R.
Poitras, D.
Wasilewski, Z. R.

November 2008

Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...

Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Abstract

Extracted data

Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

Abstract

Extracted data

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