Optical properties of stacked InGaAs sidewall quantum wires in InGaAsP/InP

The authors report on the optical properties of 3-fold stacked InGaAs sidewall quantum wires (QWires) with quaternary InGaAsP barriers grown on shallow-patterned InP (311)A substrates by chem. beam epitaxy. Temp. dependent photoluminescence (PL) reveals efficient carrier transfer from the adjacent quantum wells (QWells) into the QWires at low temp., thermally activated repopulation of the QWells at higher temp., and negligible localization of carriers along the QWires. Strong broadening of power dependent PL indicates enhanced state filling in the QWires compared to that in the QWells. Clear linear polarization of the PL from the QWires confirms the lateral quantum confinement of carriers. These results demonstrate excellent optical quality of the sidewall QWire structures with room temp. PL peak wavelength at 1.55 mm for applications in fiber-based optical telecommunication systems. [on SciFinder (R)