The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting lasers. A periodic gain structure allows more strained wells to be used than in conventional multiquantum-well devices, offering advantages for high-power devices. Aluminium ohmic contacts grown by molecular beam epitaxy are used on lasers for the first tim
In this paper we present our latest results on the design, fabrication and characterization of metal...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...
The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting...
Copyright 2005 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/87/16...
We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wa...
The factors affecting the performance of GalnP/AIGalnP vertical-cavity surface-emitting lasers (VCSE...
We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by us...
Vertical-cavity surface emitting lasers (VCSELs) are interesting devices because of their low-cost m...
The factors affecting the performance of GalnP/AlGalnP vertical-cavity surface-emitting lasers (VCSE...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL...
[[abstract]]© 2002 Elsevier - In this article, we propose a new process method to improve the light ...
We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical...
Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic che...
In this paper we present our latest results on the design, fabrication and characterization of metal...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...
The authors report low threshold current operation of InGaAs/AlGaAs vertical-cavity surface-emitting...
Copyright 2005 AIP. Link to the original site http://scitation.aip.org/content/aip/journal/apl/87/16...
We demonstrate that combined lateral-vertical oxidn. of AlGaAs can be used to change the resonant wa...
The factors affecting the performance of GalnP/AIGalnP vertical-cavity surface-emitting lasers (VCSE...
We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by us...
Vertical-cavity surface emitting lasers (VCSELs) are interesting devices because of their low-cost m...
The factors affecting the performance of GalnP/AlGalnP vertical-cavity surface-emitting lasers (VCSE...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL...
[[abstract]]© 2002 Elsevier - In this article, we propose a new process method to improve the light ...
We demonstrate, for the first time, post-growth wavelength setting of electrically-injected vertical...
Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic che...
In this paper we present our latest results on the design, fabrication and characterization of metal...
We present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz smal...
This thesis presents the characterisation of oxide-confined vertical-cavity surface-emitting laser (...