Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

SiHx film growth precursors during high-rate nanocrystalline silicon deposition

Kessels, W.M.M.
Nadir, K.
Sanden, van de, M.C.M.

January 2006

The densities of the silane radicals Si, SiH, and SiH3 were measured in a remote SiH4 plasma for var...

Hydrogen and deuterium incorporation in glow discharge amorphous silicon

Maessen, K.M.H.
Pruppers, M.J.M.
Habraken, F.H.P.M.
Bezemer, J.
Weg, W.F. van der

December 1985

The incorporation of hydrogen in glow discharge a-Si:H is investigated with an isotope method. Durin...

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden, van de, M.C.M.
Severens, R.J.
Meulenbroeks, R.F.G.
Graaf, de, M.J.
Qing, Z.
Otorbaev, D.K.
Engeln, R.A.H.
Gielen, J.W.A.M.
Mullen, van der, J.J.A.M.
Schram, D.C.

January 1995

The influence of wall-associated H/sub 2/ molecules and other hydrogen-containing monomers on the de...

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

Sanden, van de, M.C.M.
Severens, R.J.
Kessels, W.M.M.
van de Pas, F.
IJzendoorn, van, L.J.
Schram, D.C.

December 1997

The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is ...

Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma

Sanden, van de, M.C.M.
Severens, R.J.
Kessels, W.M.M.
Meulenbroeks, R.F.G.
Schram, D.C.

January 1998

The plasma chemistry of an argon/hydrogen expanding thermal arc plasma in interaction with silane in...

Hydrogen content of plasma deposited a-Si:H

Severens, R.J.
Brussaard, G.J.H.
Verhoeven, H.J.M.
Sanden, van de, M.C.M.
Schram, D.C.

January 1995

Amorphous hydrogenated Si is deposited using a remote Ar/H plasma. The plasma is generated in a d.c....

Film growth precursors in a remote SiH/sub 4/ plasma used for high-rate deposition of hydrogenated amorphous silicon

Kessels, W.M.M.
Sanden, van de, M.C.M.
Schram, D.C.

January 2000

The SiH4 dissociation products and their contribution to hydrogenated amorphous silicon (a-Si:H) fil...

An expanding thermal plasma for deposition of a-Si:H

Severens, R.J.
Brussaard, G.J.H.
Verhoeven, H.J.M.
Van de Sanden, M.C.M.
Schram, D.C.

January 1995

A remote argon/hydrogen plasma is used to deposit amorphous hydrogenated silicon. The plasma is gene...

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

Severens, R. J.
van de Sanden, M. C.M.
Verhoeven, H. J.M.
Bastiaanssen, J.
Schram, D. C.

December 1996

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than...

Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface

Agarwal, S.
Takano, A.
Sanden, van de, M.C.M.
Maroudas, D.
Aydil, E.S.

January 2002

We have studied the interactions of atomic deuterium with hydrogenated amorphous silicon (a-Si:H) su...

Deposition of a-Si:H using a supersonically expanding argon plasma

Meeusen, G.J.
Qing, Z.
Wilbers, A.T.M.
Timmermans, C.J.
Schram, D.C.

January 1991

Amorphous hydrogenated silicon (a-Si:H) is a material which is widely used in the field of solar cel...

SiHx film growth precursors during high-rate nanocrystalline silicon deposition

Kessels, W.M.M.
Nadir, K.
Sanden, van de, M.C.M.

January 2006

The densities of the silane radicals Si, SiH, and SiH3 were measured in a remote SiH4 plasma for var...

Hydrogen and deuterium incorporation in glow discharge amorphous silicon

Maessen, K.M.H.
Pruppers, M.J.M.
Habraken, F.H.P.M.
Bezemer, J.
Weg, W.F. van der

December 1985

The incorporation of hydrogen in glow discharge a-Si:H is investigated with an isotope method. Durin...

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden, van de, M.C.M.
Severens, R.J.
Meulenbroeks, R.F.G.
Graaf, de, M.J.
Qing, Z.
Otorbaev, D.K.
Engeln, R.A.H.
Gielen, J.W.A.M.
Mullen, van der, J.J.A.M.
Schram, D.C.

January 1995

The influence of wall-associated H/sub 2/ molecules and other hydrogen-containing monomers on the de...

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

Sanden, van de, M.C.M.
Severens, R.J.
Kessels, W.M.M.
van de Pas, F.
IJzendoorn, van, L.J.
Schram, D.C.

December 1997

The incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is ...

Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma

Sanden, van de, M.C.M.
Severens, R.J.
Kessels, W.M.M.
Meulenbroeks, R.F.G.
Schram, D.C.

January 1998

The plasma chemistry of an argon/hydrogen expanding thermal arc plasma in interaction with silane in...

Hydrogen content of plasma deposited a-Si:H

Severens, R.J.
Brussaard, G.J.H.
Verhoeven, H.J.M.
Sanden, van de, M.C.M.
Schram, D.C.

January 1995

Amorphous hydrogenated Si is deposited using a remote Ar/H plasma. The plasma is generated in a d.c....

Film growth precursors in a remote SiH/sub 4/ plasma used for high-rate deposition of hydrogenated amorphous silicon

Kessels, W.M.M.
Sanden, van de, M.C.M.
Schram, D.C.

January 2000

The SiH4 dissociation products and their contribution to hydrogenated amorphous silicon (a-Si:H) fil...

An expanding thermal plasma for deposition of a-Si:H

Severens, R.J.
Brussaard, G.J.H.
Verhoeven, H.J.M.
Van de Sanden, M.C.M.
Schram, D.C.

January 1995

A remote argon/hydrogen plasma is used to deposit amorphous hydrogenated silicon. The plasma is gene...

On the effect of substrate temperature on a-Si:H deposition using an expanding thermal plasma

Severens, R. J.
van de Sanden, M. C.M.
Verhoeven, H. J.M.
Bastiaanssen, J.
Schram, D. C.

December 1996

Fast (7 nm/s) deposition of amorphous hydrogenated silicon with a midgap density of states less than...

Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface

Agarwal, S.
Takano, A.
Sanden, van de, M.C.M.
Maroudas, D.
Aydil, E.S.

January 2002

We have studied the interactions of atomic deuterium with hydrogenated amorphous silicon (a-Si:H) su...

Deposition of a-Si:H using a supersonically expanding argon plasma

Meeusen, G.J.
Qing, Z.
Wilbers, A.T.M.
Timmermans, C.J.
Schram, D.C.

January 1991

Amorphous hydrogenated silicon (a-Si:H) is a material which is widely used in the field of solar cel...

SiHx film growth precursors during high-rate nanocrystalline silicon deposition

Kessels, W.M.M.
Nadir, K.
Sanden, van de, M.C.M.

January 2006

The densities of the silane radicals Si, SiH, and SiH3 were measured in a remote SiH4 plasma for var...

Hydrogen and deuterium incorporation in glow discharge amorphous silicon

Maessen, K.M.H.
Pruppers, M.J.M.
Habraken, F.H.P.M.
Bezemer, J.
Weg, W.F. van der

December 1985

The incorporation of hydrogen in glow discharge a-Si:H is investigated with an isotope method. Durin...

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden, van de, M.C.M.
Severens, R.J.
Meulenbroeks, R.F.G.
Graaf, de, M.J.
Qing, Z.
Otorbaev, D.K.
Engeln, R.A.H.
Gielen, J.W.A.M.
Mullen, van der, J.J.A.M.
Schram, D.C.

January 1995

The influence of wall-associated H/sub 2/ molecules and other hydrogen-containing monomers on the de...

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

Abstract

Extracted data

Hydrogen incorporation during deposition of a-Si:H from an intense source of SiH3

Abstract

Extracted data

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