The present work aims to implement a calorimetric method to measure the power dissipated during MOSFET switching in a high efficiency LLC resonant converter. The power dissipated from switching can significantly impact the total power dissipated by the device and consequent efficiency, so correct quantification is fundamental for optimizing the devices and increasing the efficiency of the converters. In LLC converters, this type of dissipated power cannot be measured with standard methods such as measurement with oscilloscopes as some of the energy that is recovered and not dissipated. The calorimetric method requires reasonably accurate measurement of thermal resistance and the temperature of the die. To facilitate accurate temperature mea...
Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a h...
The heart of every switched mode converter consists of several switching semiconductor elements. Du...
The article presents an analytical description of the turn-off process of the power MOSFET suitable ...
LLC resonant converters have become a mainstream topology in DC/DC power conversion applications suc...
The measurement of losses in high efficiency / high power converters is difficult. Measuring the los...
The measurement of the power dissipated by a semiconductor device is essential to evaluate the perfo...
The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable...
This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fas...
Efficiency is an important performance measure for dc-dc converters. Its measurement can be extremel...
In this paper, a calorimetric method is presented to measure the total inverter power losses, for th...
International audienceCalorimetric measurement methods allowed to investigate power losses for h...
This paper quantifies the soft switching loss of a 1.2 kV SiC MOSFET module via a calorimetric metho...
International audienceThe power loss plays a significant role in the design, implementation and use ...
In this is thesis the LLC resonant converter will be studied. From the state space equations up to s...
This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FC...
Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a h...
The heart of every switched mode converter consists of several switching semiconductor elements. Du...
The article presents an analytical description of the turn-off process of the power MOSFET suitable ...
LLC resonant converters have become a mainstream topology in DC/DC power conversion applications suc...
The measurement of losses in high efficiency / high power converters is difficult. Measuring the los...
The measurement of the power dissipated by a semiconductor device is essential to evaluate the perfo...
The switching loss of the secondary side rectifiers in LLC resonant converters can have a noticeable...
This paper proposes a simple and accessible method for dynamic calorimetric measurement of ultra-fas...
Efficiency is an important performance measure for dc-dc converters. Its measurement can be extremel...
In this paper, a calorimetric method is presented to measure the total inverter power losses, for th...
International audienceCalorimetric measurement methods allowed to investigate power losses for h...
This paper quantifies the soft switching loss of a 1.2 kV SiC MOSFET module via a calorimetric metho...
International audienceThe power loss plays a significant role in the design, implementation and use ...
In this is thesis the LLC resonant converter will be studied. From the state space equations up to s...
This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FC...
Within this paper the switching losses of a Wolfspeed 25mOhm bare die SiC-MOSFET are measured in a h...
The heart of every switched mode converter consists of several switching semiconductor elements. Du...
The article presents an analytical description of the turn-off process of the power MOSFET suitable ...