Characteristics of semiconductor BSE electron microscope detector

The thesis deals with the characterization of a semiconductor detector of backscattered electrons. The theoretical part describes two types of electron microscopes, the interaction of the primary beam with the sample and individual types of electrons and radiation arising during the interaction. The most used types of electron detectors in scanning electron microscope are summarized. The basic characteristics of the semiconductor backscattered electron detector and their measurement methods are described. The experimental part deals with measuring the characteristics of the detector made by Delong Instruments and comparing it with commercially available detectors. Volt-ampere characteristic and dark current, the dependence of the gain on the accelerating voltage, as well as the time response of the detector were measured