The effect of the synthesis conditions on the crystal structure of palladium(II) oxide nanofilms

Nanocrystalline films of palladium(II) oxide obtained by oxidation of the initial metallic Pd layers with a thickness of 35 nm on Si (100) substrates in atmospheric air were studied using XRD analysis, TEM, and RHEED. PdO/SiO2/Si (100) heterostructures were synthesised in two stages. First, we obtained finely dispersed layers of metallic Pd on SiO2/Si (100) substrates with an ~ 300 nm SiO2 buffer layer using thermal sublimation in a high vacuum. The Pd layers were then oxidised in the temperature range Tox = 620 – 1100 K in atmospheric air (with the partial pressure of oxygen of about 21 kPa). The study determined that the deformation of the tetragonal crystal structure of homogeneous nanocrystalline PdO films is explained by an increase in the values of lattice parameters with the oxidation temperature. The deformation reaches its maximum values at Tox ~ 970 K. Comparison of the obtained results with the earlier data regarding PdO/SiO2/Si (100) heterostructures synthesised in a dry oxygen atmosphere (with the partial pressure of oxygen of about 101.3 kPa) demonstrated that PdO films synthesized in an oxygen atmosphere are characterized by a higher degree of deformation of the crystal structure. The effect of the oxidation temperature and O2 partial pressure on the increase in the tetragonal lattice parameters of the PdO films can be explained by the formation of interstitial oxygen atoms in the octahedral void in the centre of the palladium(II) oxide unit cell