A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management and thermal cycling reliability of the designed SiC module, genetic algorithm (GA)–assisted optimization methods were proposed to optimize the RDL via size. First, the heat dissipation and the plastic work density of the SiC MOSFET module with various via diameters and depths were simulated using finite element simulations. Next, both the ant colony optimization-backpropagation neural network (ACOBPNN...
This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embed...
Thermal considerations in Printed Wiring Board (PWB) assemblies are becoming increasingly important ...
The race for miniaturization of integrated circuits causes the appearance of anumber of parasitics e...
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) p...
Power electronics design is an interdisciplinary research. Enhancing power density became more and m...
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, as...
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
Insulated gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-...
In this paper, a novel fan-out panel-level printed circuit board (PCB) embedded package technology f...
The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide– semiconductor field-eff...
The reliability of power modules is closely depended on their electrical and thermal behavior in ope...
Silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) have seen rapid g...
This paper focuses on the thermal investigation of SiC-based power modules with the purpose to suppo...
This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embed...
Thermal considerations in Printed Wiring Board (PWB) assemblies are becoming increasingly important ...
The race for miniaturization of integrated circuits causes the appearance of anumber of parasitics e...
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) p...
Power electronics design is an interdisciplinary research. Enhancing power density became more and m...
A high frequency SiC MOSFET-based three-phase, 2-level power module has been designed, simulated, as...
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
Insulated gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power convers...
In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-...
In this paper, a novel fan-out panel-level printed circuit board (PCB) embedded package technology f...
The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide– semiconductor field-eff...
The reliability of power modules is closely depended on their electrical and thermal behavior in ope...
Silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) have seen rapid g...
This paper focuses on the thermal investigation of SiC-based power modules with the purpose to suppo...
This paper characterizes thermal and reliability performance of a SiC MOSFET power module with embed...
Thermal considerations in Printed Wiring Board (PWB) assemblies are becoming increasingly important ...
The race for miniaturization of integrated circuits causes the appearance of anumber of parasitics e...