Black phosphorus (BP) is an emerging two-dimensional (2D) material with a natural bandgap, which has unique anisotropy and extraordinary physical properties. Due to its puckered structure, BP exhibits strong in-plane anisotropy unlike other layered materials. The bandgap tunability of BP enables a wide range of ultrafast electronics and high frequency optoelectronic applications ranging from telecommunications to thermal imaging covering the nearly entire electromagnetic spectrum, whereas no other 2D material has this functionality. Here, recent advances in the synthesis, fabrication, anisotropic physical properties, and BP-based devices including field effect transistors (FETs) and photodetectors, are discussed. Recent passivation approach...
In this article I want to show some properties of black phosphorus (BP) and some of its applications...
Few-layer black phosphorus, a new elemental two-dimensional (2D) material recently isolated by mecha...
One key challenge in developing postsilicon electronic technology is to find ultrathin channel mater...
Black phosphorus (BP) is an emerging two-dimensional (2D) material with a natural bandgap, which has...
The discovery of graphene has inspired great research interest in two-dimensional (2D) layered nanom...
Owing to its high charge-carrier mobility, tunable direct-bandgap and unique in-plane anisotropic st...
Recent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP),...
Few-layer ultrathin nanosheets and ultrasmall quantum dots of black phosphorus (BP) have attracted i...
Herein, we present the enormous capabilities of the most recent rediscovered 2D material named black...
Proceeding the current interest in layered structure for electronic and optoelectronic applications,...
International audienceA great interest has been lately initiated in the optoelectronics field for 2D...
University of Minnesota Ph.D. dissertation. June 2017. Major: Electrical Engineering. Advisor: Steve...
One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (b...
Overcoming the intrinsic instability and preserving unique electronic properties are key challenges ...
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Jingsi Qiao1,2...
In this article I want to show some properties of black phosphorus (BP) and some of its applications...
Few-layer black phosphorus, a new elemental two-dimensional (2D) material recently isolated by mecha...
One key challenge in developing postsilicon electronic technology is to find ultrathin channel mater...
Black phosphorus (BP) is an emerging two-dimensional (2D) material with a natural bandgap, which has...
The discovery of graphene has inspired great research interest in two-dimensional (2D) layered nanom...
Owing to its high charge-carrier mobility, tunable direct-bandgap and unique in-plane anisotropic st...
Recent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP),...
Few-layer ultrathin nanosheets and ultrasmall quantum dots of black phosphorus (BP) have attracted i...
Herein, we present the enormous capabilities of the most recent rediscovered 2D material named black...
Proceeding the current interest in layered structure for electronic and optoelectronic applications,...
International audienceA great interest has been lately initiated in the optoelectronics field for 2D...
University of Minnesota Ph.D. dissertation. June 2017. Major: Electrical Engineering. Advisor: Steve...
One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (b...
Overcoming the intrinsic instability and preserving unique electronic properties are key challenges ...
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus Jingsi Qiao1,2...
In this article I want to show some properties of black phosphorus (BP) and some of its applications...
Few-layer black phosphorus, a new elemental two-dimensional (2D) material recently isolated by mecha...
One key challenge in developing postsilicon electronic technology is to find ultrathin channel mater...