A reconfigurable via with a phase change material, Ge2Sb2Te5 material is an interesting prospect to replace the current reconfigurable device technology. Its scalability, thermal stability and ability to achieve high-performance reconfigurable logic application without significantly sacrificing logic gate density or power deserves to more research attention. Similar to phase change memories, a phase change interconnect uses the high resistance ratio between the ON/ OFF state by switching between a polycrystalline and amorphous Ge2Sb2Te5 states respectively activated by joule heating. Therefore knowing the heating and the temperature profile of the Ge2Sb2Te5 is critical for optimizing device scalability, programming rates, power requirement...
International audienceThe cross-plane thermal conductivity of Ge$_2$Sb$_2$Te$_5$, either in its amor...
Les mémoires à changement de phase (PCRAM) sont l'un des candidats les plus prometteurs pour la proc...
In this work, three phase change memory (PCM) devices using layered chalcogenide materials, GeTe/SnT...
A reconfigurable via with a phase change material, Ge2Sb2Te5 material is an interesting prospect to ...
I simulate phase change including stochastic nucleation and growth of discrete grains with a finite ...
WOS:000355925600029The high contrast in the electrical resistivity between amorphous and crystalline...
Phase change memory (PCM) is a novel nonvolatile memory technology with great potential for scaling ...
Phase change memory (PCM) is a novel nonvolatile memory technology with great potential for scaling ...
Materials designed to undergo a phase transition at a prescribed temperature have been advanced as e...
International audienceIn the domain of phase change memories (PCMs), intensive research is conducted...
MasterPhase-change memory (PCM) using chalcogenide materials has been spotlighted as non-volatile me...
Phase change memory (PCM) is an important element in the development and realization of new forms of...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
The recent proliferation of portable communication devices or data storage equipment is strongly rel...
Phase change memory (PCM) is currently seen as the most promising candidate for a future storage-cla...
International audienceThe cross-plane thermal conductivity of Ge$_2$Sb$_2$Te$_5$, either in its amor...
Les mémoires à changement de phase (PCRAM) sont l'un des candidats les plus prometteurs pour la proc...
In this work, three phase change memory (PCM) devices using layered chalcogenide materials, GeTe/SnT...
A reconfigurable via with a phase change material, Ge2Sb2Te5 material is an interesting prospect to ...
I simulate phase change including stochastic nucleation and growth of discrete grains with a finite ...
WOS:000355925600029The high contrast in the electrical resistivity between amorphous and crystalline...
Phase change memory (PCM) is a novel nonvolatile memory technology with great potential for scaling ...
Phase change memory (PCM) is a novel nonvolatile memory technology with great potential for scaling ...
Materials designed to undergo a phase transition at a prescribed temperature have been advanced as e...
International audienceIn the domain of phase change memories (PCMs), intensive research is conducted...
MasterPhase-change memory (PCM) using chalcogenide materials has been spotlighted as non-volatile me...
Phase change memory (PCM) is an important element in the development and realization of new forms of...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
The recent proliferation of portable communication devices or data storage equipment is strongly rel...
Phase change memory (PCM) is currently seen as the most promising candidate for a future storage-cla...
International audienceThe cross-plane thermal conductivity of Ge$_2$Sb$_2$Te$_5$, either in its amor...
Les mémoires à changement de phase (PCRAM) sont l'un des candidats les plus prometteurs pour la proc...
In this work, three phase change memory (PCM) devices using layered chalcogenide materials, GeTe/SnT...