Variability study of nanowire: a compact model application

57 p.In this work, figures of merits (FOM), such as Ion, I0fr, Gm, Gd, are studied using ananowire compact model which is non-binnable with minimal physically meaningful parameters. Statistical theories are applied to the mathematical compact model for describing major transistor FOM's and their bias/geometry dependencies. Further, the sensitivities of these FOMs to the geometry and biasvariations are computed and their impacts on variances of the target parameters are computed using certain statistical models. Finally, the computed statistics are verified by performing Monte Carlo circuit simulations using a Nanowire Compact Model. This study provides a useful tool and a guideline in analysing circuit and device FOM's of MOSFET which would be useful for probabilistic CMOS design paradigms that exploit randomness in futuristic devices by taking advantage of probabilistic behaviours into chip designs.Master of Science (Electronics