We calculate the electronic structures of Germanium nanowires by taking the effective-mass theory. The electron and hole states at the Γ-valley are studied via the eight-band k.p theory. For the [111] L-valley, we expand the envelope wave function using Bessel functions to calculate the energies of the electron states for the first time. The results show that the energy dispersion curves of electron states at the L-valley are almost parabolic irrespective of the diameters of Germanium nanowires. Based on the electronic structures, the density of states of Germanium nanowires are also obtained, and we find that the conduction band density of states mostly come from the electron states at the L-valley because of the eight equivalent degenerat...
Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role in future el...
We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element ...
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT...
Electronic structures of hydrogen-passivated germanium nanowires (GeNWs) along the [100], [110], [11...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Societal continued demand for faster and more compactness to life’s everyday solutions have shifted ...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
Germanium (Ge) is the most compatible semiconductor material with silicon-based complementary metal-...
In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germa...
In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germa...
Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role in future el...
We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element ...
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT...
Electronic structures of hydrogen-passivated germanium nanowires (GeNWs) along the [100], [110], [11...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Within a first-principles framework we show how many-body effects crucially modify the electronic an...
Societal continued demand for faster and more compactness to life’s everyday solutions have shifted ...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
Germanium (Ge) is the most compatible semiconductor material with silicon-based complementary metal-...
In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germa...
In this work we study the optical properties of hydrogen-passivated, free-standing silicon and germa...
Germanium/Germanium-Silicon core/shell nanowires are expected to play an important role in future el...
We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element ...
Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT...