Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also b...
The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV...
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultr...
International audienceThe interest in nanowire photodetectors stems from their unique properties, su...
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the Al...
We report on metal–semiconductor–metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dime...
Cost-effective fabrication and rapid packaging of AlGaN/GaN ultraviolet (UV) photodetectors was demo...
A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with...
peer reviewedThe optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer s...
Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated us...
Abstract: Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interl...
The development of transferrable free-standing semiconductor materials and their heterogeneous integ...
AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricat...
Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricati...
Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent Universit...
Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricat...
The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV...
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultr...
International audienceThe interest in nanowire photodetectors stems from their unique properties, su...
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the Al...
We report on metal–semiconductor–metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dime...
Cost-effective fabrication and rapid packaging of AlGaN/GaN ultraviolet (UV) photodetectors was demo...
A report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with...
peer reviewedThe optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer s...
Three-dimensional heterostructured AlGaN/GaN ultraviolet (UV) photodetectors were microfabricated us...
Abstract: Nitride-based p-i-n ultraviolet (UV) photodetectors with a low-temperature (LT) GaN interl...
The development of transferrable free-standing semiconductor materials and their heterogeneous integ...
AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricat...
Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricati...
Ankara : The Department of Physics and the Institute of Engineering and Science of Bilkent Universit...
Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricat...
The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV...
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultr...
International audienceThe interest in nanowire photodetectors stems from their unique properties, su...