Add to ORKGThis thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).Master of Engineerin
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The study of deep level traps...
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a c...
This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs a...
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optica...
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optica...
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From ...
In this paper, we report the theoretical predictions of a high-index GaAs substrate ((111)A and (31...
In this paper, we report the theoretical predictions of a high-index GaAs substrate ((111)A and (31...
The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functio...
The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functio...
A robust process technology using optical and electron beam lithography has been developed for 0.25 ...
A robust process technology using optical and electron beam lithography has been developed for 0.25 ...
This paper reviews the requirements and current practices in the molecular beam epitaxial (MBE) grow...
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron...
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The study of deep level traps...
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a c...
This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs a...
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optica...
This thesis presents the growth and characterisation of InP/InxGai_xAs/InP HEMTs. Electrical, optica...
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From ...
In this paper, we report the theoretical predictions of a high-index GaAs substrate ((111)A and (31...
In this paper, we report the theoretical predictions of a high-index GaAs substrate ((111)A and (31...
The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functio...
The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functio...
A robust process technology using optical and electron beam lithography has been developed for 0.25 ...
A robust process technology using optical and electron beam lithography has been developed for 0.25 ...
This paper reviews the requirements and current practices in the molecular beam epitaxial (MBE) grow...
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron...
This work demonstrates the fabrication and operation of several types of pseudomorphic high electron...
102 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1987.The study of deep level traps...
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a c...