Add to ORKGThe low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.Doctor of Philosophy (EEE
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...
Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the gener...
A new technique for epitaxial growth of thin semiconductor films, molecular beam epitaxy (MBE), prov...
This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum ...
This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum ...
[[abstract]]Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique....
Molecular Beam Epitaxy (MBE) is an Ultra-High-Vacuum (UHV)-based technique for producing high qualit...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its un...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Cur...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...
Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the gener...
A new technique for epitaxial growth of thin semiconductor films, molecular beam epitaxy (MBE), prov...
This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum ...
This thesis presents the systematic growth and characterization studies of the GaInNAs/GaAs Quantum ...
[[abstract]]Molecular beam epitaxy (MBE) is a highly precise and versatile crystal growth technique....
Molecular Beam Epitaxy (MBE) is an Ultra-High-Vacuum (UHV)-based technique for producing high qualit...
The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures h...
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its un...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by ...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Cur...
The fast growing demand for internet bandwidth has spurred the need for low cost optoelectronic devi...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...
A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001)...