Low-threshold germanium laser for chip-scale LiDAR

In this paper, we present our recent result on germanium lasers on silicon that operate at a low threshold. We will introduce our innovative strain engineering platforms that can create direct bandgap germanium nanowires by inducing >5% elastic tensile strain. Then, we will present our first experimental observation of low-threshold optically pumped lasing in strained germanium nanowires. We will also discuss the possibility of our on-chip lasers for the ultimate realization of chip-scale LiDAR systems.Ministry of Education (MOE)National Research Foundation (NRF)Accepted versionThis work was supported by MOE under AcRF Tier 1 (RG 179/17) and Start-Up Grant (M4082093.040) from Nanyang Technological University (NTU) in Singapore. This work is also supported by National Research Foundation of Singapore through the Competitive Research Program (NRF2017NRFCRP001- 003)