Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum dot lasers up to 120 °C. The laser showed high performance and the gain bandwidth is found to be insensitive to the temperature.Published versio
We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot...
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on...
Gain peak shifts with injection in undoped and p-doped InAs quantum dot laser structures between 200...
Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum ...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
We report on the fabrication and characterization of single-transverse mode 1.3 μm InAs/InGaAs QD la...
International audienceThis paper presents the temperature dependent characteristics of a semiconduct...
Abstract We investigate the influence of thermal effects on the high-speed performance...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
A Strong temperature dependence of microdisk lasers and photonic crystal nanocavity lasers with InAs...
In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μ...
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in...
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar...
International audienceIn this paper, a theoretical model is used to investigate the lasing spectrum ...
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at...
We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot...
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on...
Gain peak shifts with injection in undoped and p-doped InAs quantum dot laser structures between 200...
Temperature-dependent lasing and optical gain characteristics were investigated on the InAs quantum ...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
We report on the fabrication and characterization of single-transverse mode 1.3 μm InAs/InGaAs QD la...
International audienceThis paper presents the temperature dependent characteristics of a semiconduct...
Abstract We investigate the influence of thermal effects on the high-speed performance...
Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under...
A Strong temperature dependence of microdisk lasers and photonic crystal nanocavity lasers with InAs...
In this letter, we report on experimental results of directly modulated single-transverse mode 1.3-μ...
We have studied the properties of quantum dot lasers comprising a single layer of InGaAs dots set in...
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar...
International audienceIn this paper, a theoretical model is used to investigate the lasing spectrum ...
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at...
We have investigated the temperature dependence of threshold in p-doped 1.3 μm InAs/GaAs quantum dot...
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on...
Gain peak shifts with injection in undoped and p-doped InAs quantum dot laser structures between 200...
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