Add to ORKGThe purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.Master of Engineering (MSE
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...
AbstractAtomic processes and structural configurations during thin film growth of silicon are studie...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...
The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial fil...
The molecular dynamics method using an empirical potential energy function to describe the Sisingle ...
A numerical Monte Carlo (MC) model is described in detail to simulate epitaxial growth. This model a...
We performed ab initio zero temperature and finite temperature molecular dynamics calculations to in...
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperatu...
Deposition of thin films using low energy, mass-separated ion beams is a potentially important low t...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
The (001) surface of silicon has been the topic of our study in this thesis. The clean surface, an-a...
The value of In situ monitoring to study growth dynamics and surface reaction kinetics in a gas sour...
Ankara : Department of Physics and the Institute of Engineering and Science of Bilkent Univ., 2000.T...
Purpose of the work: investigation of processes influencing the formation of the surface morphology ...
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by ch...
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...
AbstractAtomic processes and structural configurations during thin film growth of silicon are studie...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...
The purpose of this thesis is to investigate the initial stages of the growth of heteroepitaxial fil...
The molecular dynamics method using an empirical potential energy function to describe the Sisingle ...
A numerical Monte Carlo (MC) model is described in detail to simulate epitaxial growth. This model a...
We performed ab initio zero temperature and finite temperature molecular dynamics calculations to in...
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperatu...
Deposition of thin films using low energy, mass-separated ion beams is a potentially important low t...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
The (001) surface of silicon has been the topic of our study in this thesis. The clean surface, an-a...
The value of In situ monitoring to study growth dynamics and surface reaction kinetics in a gas sour...
Ankara : Department of Physics and the Institute of Engineering and Science of Bilkent Univ., 2000.T...
Purpose of the work: investigation of processes influencing the formation of the surface morphology ...
The paper presents investigations of the surface roughness of epitaxial silicon films obtained by ch...
Low temperature film growth involves a competition between the energetics and kinetics of atom motio...
AbstractAtomic processes and structural configurations during thin film growth of silicon are studie...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...