Add to ORKGSingle damascene copper interconnect structures were fabricated. Cu/ultra-low-k (porous SiLKTM) interconnects were subjected to surface treatments to study the effects on the structural and electrical properties, including Fourier transform infrared spectroscopy, atomic force microscopy and electrical testing.Master of Science (Microelectronics
In this study, SAC305 and SAC305-0.3Ni solder balls were soldered onto Cu, high temperature treated ...
[[abstract]]The effect of copper (Cu) barrier film deposition process on the Cu interconnects was in...
In the electronics industry, interconnect is defined as a conductive connection between two or more ...
Signal integrity problems associated with on-chip interconnects have become very significant with in...
The texture and stress properties of barrier layers on three types of low-k materials for copper (Cu...
In the first part of this dissertation, copper bimetallic corrosion and its inhibition in cleaning p...
In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
The integration of Cu and ULK porous SiLK using different barriers on blanket and patterned wafers h...
10.1116/1.1795251Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structur...
The copper interconnect technology is constrained by the non-uniformity of the current distribution ...
textIn this study, the stress relaxation and electromigration behaviors of Cu/low-k interconnects w...
As VLSI technologies advance, they closely follow Moore’s Law where devices are scaled down to small...
© 2015 IEEE. Replacement of sacrificial template by ultralow-k dielectric was studied as an alternat...
The integration of copper and new low dielectric constant materials is a fundamental challenge to be...
In this study, SAC305 and SAC305-0.3Ni solder balls were soldered onto Cu, high temperature treated ...
[[abstract]]The effect of copper (Cu) barrier film deposition process on the Cu interconnects was in...
In the electronics industry, interconnect is defined as a conductive connection between two or more ...
Signal integrity problems associated with on-chip interconnects have become very significant with in...
The texture and stress properties of barrier layers on three types of low-k materials for copper (Cu...
In the first part of this dissertation, copper bimetallic corrosion and its inhibition in cleaning p...
In order to realize the high performance of RC delay, direct polished porous type ultra low-K film (...
Recently Al was replaced by Cu as an interconnecting material. The primary objective of the present ...
The integration of Cu and ULK porous SiLK using different barriers on blanket and patterned wafers h...
10.1116/1.1795251Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structur...
The copper interconnect technology is constrained by the non-uniformity of the current distribution ...
textIn this study, the stress relaxation and electromigration behaviors of Cu/low-k interconnects w...
As VLSI technologies advance, they closely follow Moore’s Law where devices are scaled down to small...
© 2015 IEEE. Replacement of sacrificial template by ultralow-k dielectric was studied as an alternat...
The integration of copper and new low dielectric constant materials is a fundamental challenge to be...
In this study, SAC305 and SAC305-0.3Ni solder balls were soldered onto Cu, high temperature treated ...
[[abstract]]The effect of copper (Cu) barrier film deposition process on the Cu interconnects was in...
In the electronics industry, interconnect is defined as a conductive connection between two or more ...