The band structures, optical gain spectra, and transparency radiative current densities of compressive-strained GaInNAs quantum wells(QWs) with different tensile-strained GaAsN (N composition from 0 to 3%) barriers are systematically investigated using a modified 6x6 k.p Hamiltonian including the heavy hole, light hole, and spin-orbit splitting bands. We found that the transition energy decreases when increasing the N composition in the barrier. The optical gain spectra and maximum optical gain as a function of carrier density and radiative current density are obtained for the GaInNAs/GaAsN QWs with well width of 5 nm, Inw = 28%, and Nw= 2.66% emitting around 1.55 μm. The transparency carrier density increases with the nitrogen composition ...
[[abstract]]The valence subband structures, optical gain spectra, transparency carrier densities, an...
The optical transitions in InGaAsN/GaAs quantum wells were studied. It was observed by low-temperatu...
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the...
The spectral gain characteristics of dilute-nitride zinc blende Inx Ga1-x Ny As1-y quantum wells emb...
We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well stru...
A 10-band k.p formula including electric field effect is introduced to calculate the band structures...
The spectral gain characteristics of dilute-nitride zinc blende Inx Ga1-x Ny As1-y quantum wells emb...
The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...
We report on the effects of combined strain-compensating and strain-mediating layers of various widt...
The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...
This thesis presents theoretical studies of electronic band structures and optical properties for co...
[[abstract]]The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are nu...
Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs ...
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are...
We report on the effects of combined strain-compensating and strain-mediating layers of various widt...
[[abstract]]The valence subband structures, optical gain spectra, transparency carrier densities, an...
The optical transitions in InGaAsN/GaAs quantum wells were studied. It was observed by low-temperatu...
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the...
The spectral gain characteristics of dilute-nitride zinc blende Inx Ga1-x Ny As1-y quantum wells emb...
We report results from theoretical and experimental investigations of GaInNAs/GaAs quantum well stru...
A 10-band k.p formula including electric field effect is introduced to calculate the band structures...
The spectral gain characteristics of dilute-nitride zinc blende Inx Ga1-x Ny As1-y quantum wells emb...
The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...
We report on the effects of combined strain-compensating and strain-mediating layers of various widt...
The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative...
This thesis presents theoretical studies of electronic band structures and optical properties for co...
[[abstract]]The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are nu...
Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs ...
The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are...
We report on the effects of combined strain-compensating and strain-mediating layers of various widt...
[[abstract]]The valence subband structures, optical gain spectra, transparency carrier densities, an...
The optical transitions in InGaAsN/GaAs quantum wells were studied. It was observed by low-temperatu...
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the...